| PART |
Description |
Maker |
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| 2SC5789 |
SMALL-SIGNAL TRANSISTOR FOR HIGH FREQUENCY AMPLIFY APPLICATION
|
Panasonic Semiconductor
|
| 2SC5621 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC5621 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
SMALL-SIGNAL TRANSISTOR
|
List of Unclassifed Manufacturers
ETC[ETC]
Isahaya Electronics Corporation
|
| 2SC5214 |
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
For Low Frequency Amplify Application Silicon Npn Epitaxial Type
|
Isahaya Electronics Corporation
ETC
List of Unclassifed Manufacturers
|
| RT2A00AM1 |
COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION
|
Isahaya Electronics Cor...
|
| INC6005AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC581410 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
Isahaya Electronics Cor...
|
| ISA1989AU1 ISA1989AU110 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
